High speed package on package structure designed for SiC-MOSFET and its performance evaluation
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摘要:作为脉冲系统的核心部件，开关承担着脉冲成形、功率调制等重要作用，开关通断速度往往决定脉冲上升时间，高速开关是纳秒短脉冲形成的关键。提出一种高速SiC-MOSFET叠层封装结构，整体布局无引线、无外接，具有极低寄生电感。开展了电磁场仿真研究，揭示了脉冲形成过程中封装多介质界面电磁场分布规律，明确了封装结构电磁薄弱环节，为进一步绝缘优化提供指导。搭建双脉冲测试平台，对研制的SiC-MOSFET叠层封装开关与同芯片商用TO-263-7封装开关的动态性能进行测试。结果表明，大电流工况下，所提封装电流开通速度提升48%，关断速度提升50%，开通损耗降低54.6%，关断损耗降低62.8%，实验结果验证了所提叠层封装结构对开关动态性能的改善。
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关键词:
- 脉冲功率开关/
- SiC-MOSFET/
- 开关封装结构/
- 双脉冲测试/
- 开关动态性能
Abstract:As the core component of pulse power system, switch plays an important role in pulse forming and power modulation. Usually, the rise time of the pulse generated is often determined by the on-off speed and the high-speed switch is vital to the formation of nanosecond short pulses.Therefore, this paper proposed a high-speed SiC-MOSFET package on package structure. The overall layout has no lead or external connection, and has very low parasitic inductance. In this paper, the electromagnetic field simulation research of the proposed package is carried out, and the electromagnetic field distribution of the multi-media interface of the package is revealed during the pulse formation process.The electromagnetic weak link of the package structure is clarified, which provides guidance for further insulation optimization. A dual-pulse test platform was built to compare the dynamic performance of the proposed package on package structure switch and the commercial TO-263-7 package switch. The experimental results show that under high current conditions, the proposed packaging improves the turnning off by 48%, the turnning off speed by 50%, the turnning on loss by 54.6%, and the turnning off loss by 62.8%. The experimental results verify the improvement effect of package on package structure on the dynamic performance of the switch. -
图 1极低寄生电感叠层结构内部示意图
Figure 1.Schematic diagram of the interior of package on package (PoP)
图 3脉冲形成过程的叠层封装磁场空间变化
Figure 3.Spatial variation of magnetic field of laminated package during pulse formation
图 4脉冲平顶阶段叠层封装的磁密矢量分布
Figure 4.Magnetic density vector distribution of the PoP in pulse flat top stage
图 5脉冲平顶阶段叠层封装的电流密度分布
Figure 5.Current density distribution of the PoP in pulse flat top stage
图 8额定电流36A时TO-263与PoP封装双脉冲测试对比波形
Figure 8.Comparison of TO-263 and PoP package double pulse test waveforms at rated current 36A
图 9极限脉冲电流90 A时TO-263与PoP封装双脉冲测试对比波形
Figure 9.Comparison of TO-263 and PoP double pulse test when the pulse current is 90 A
表 1特性评估实验参数
Table 1.Characteristic evaluation experimental parameters
Csave/μF Lsave/μH Ug.sta-off/V Rg.current/mΩ Ug.on/V Ug.off/V Rdamp/Ω chip of PoP 5 75 −9 20 15 −9 5 CPM3-0065-1000B 
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表 2额定电流36 A时TO-263与PoP封装的参数对比
Table 2.Comparison of TO-263 and PoP package parameters at a rated current of 36 A
package Uds(turn-on)/ns Uds(turn-off)/ns id(turn-on)/ns id(turn-off)/ns Ploss(turn-on)/μJ Ploss(turn-off)/μJ Uds/V TO-263 4.3 2.7 6.1 23.8 80.9 320.1 954 PoP 4.0 2.6 4.1 6.8 69.9 212.3 955 下载:
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表 3极限脉冲电流90 A时TO-263与PoP封装的参数对比
Table 3.Comparison of TO-263 and PoP package parameters when the limit pulse current is 90 A
package Uds(turn-on)/ns Uds(turn-off)/ns id(turn-on)/ns id(turn-off)/ns Ploss(turn-on)/μJ Ploss(turn-off)/μJ Uds/V TO-263 3.8 2.2 22.9 15.8 285.8 1168.4 739 PoP 3.4 2.1 11.9 7.9 129.5 433.8 735 下载:
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